Basic Parameters of Gallium Arsenide (GaAs)

GaAs - Gallium Arsenide

Basic Parameters at 300 K

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 4.42·1022
de Broglie electron wavelength 240 A
Debye temperature 360 K
Density 5.32 g cm-3
Dielectric constant (static ) 12.9
Dielectric constant (high frequency) 10.89
Effective electron mass me 0.063mo
Effective hole masses mh 0.51mo
Effective hole masses mlp 0.082mo
Electron affinity 4.07 eV
Lattice constant 5.65325 A
Optical phonon energy 0.035 eV