NSM Archive - Aluminium Nitride (AlN) - Optical properties

Optical properties
Remarks | Referens | ||
Dielectric constant (static) | 9.14 | 300 K, reflectivity | Collins et al. (1967) |
8.5 | 300 K | Goldberg (2001) | |
Dielectric constant (high frequency) | 4.84 4.6 |
300 K, reflectivity 300 K |
Collins et al. (1967) Goldberg (2001) |
Infrared refractive index | 2.1 - 2.2 | 300 K, Epitaxial films and monocrystals | Meng, (1994) |
1.9 - 2.1 | 300 K, Polycrystalline films | ||
1.8 - 1.9 | 300 K, Amorphous films | ||
Radiative recombination coefficient |
0.4 x 10-10 cm-1 s-1 | 300 K | Walker et al. (1997) |
Optical phonon energy | 99 meV | 300 K |
phonon wavenumbers: | Remarks | Referens | |
νTO(E1) | 895(2) cm-1 |
RT. Raman scattering | Sanjurjo et al. (1983) |
νLO(E1) | 671.6(8) cm-1 | ||
νTO(A1) | 888(2) cm-1 | ||
νLO(A1) | 659.3(6) cm-1 | ||
ν(E2) | 303 cm-1 | Raman scattering, tentative assignment | Carlone, et al. (1984) |
ν(E2) | 426 cm-1 | ||
νTO(A1) | 514 cm-1 | ||
νTO(E1) | 614 cm-1 | ||
νLO(A1) | 663 cm-1 | ||
νLO(E1) | 821 cm-1 |
Optical properties
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AlN, Wurtzite. Refractive index n vs. wavelength. 300 K 1 -- Geidur & Yaskov (1980); 2-3 -- Demiryont et al. (1986) |
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AlN, Wurtzite. Normal incidence reflectivity versus photon energy.
Ultraviolet region. Loughin and French (1994) |
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AlN, Wurtzite. Normal incidence reflectivity versus wavelength. Infrared
region. Circles are experimental values, solid line is calculated. Akasaki & Hashimoto (1967) |
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AlN, Wurtzite. The absorption coefficient squared versus photon energy
near the intrinsic absorption edge for 300 K and 5 K. The values of 6.2 and 6.28 eV resulting from a straight-line fit are shown Perry & Rutz (1978) |
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AlN, Wurtzite. The absorption coefficient versus photon energy at 300
K. Demiryont et al. (1986) |
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AlN, Wurtzite. The absorption coefficient versus photon energy at 300
K for sputter-deposited microcrystalline AlN grown on fused silica. Aita et al. (1989); see also Zarwasch et al. (1992) |