NSM Archive - Aluminium Nitride (AlN) - Mobility and Hall Effect

AlN - Inllium Nitride

Mobility and Hall Effect

Owing to the large energy gap, transport is always extrinsic.
Conductivity σ 10-3 ÷ 10-5 Ω-1 cm-1 290 K ;
doped (Al2OC) single p-type crystals (blue)
Edwards et al. (1965)
10-11 ÷ 10-13 Ω-1 cm-1 300 K ;
undoped single crystals (colorless or pale yellow)
see also Conductivity vs. reciprocal temperature.
 
Electron drift mobility μn ~= 300 cm2 V-1 s-1 300 K ; calculated Chin et al. (1994)
Phonon-limited electron drift mobility μn ~= 2000 cm2 V-1 s-1 77 K ; calculated for very weak doped AlN  
Mobility holes μp 14 cm2 V-1 s-1 290 K ; doped single crystal,
the authors point out that this result must be viewed with some caution
Edwards et al. (1965)
AlN, Wurtzite. Electron mobility vs. electron concentration at 300 K.
Wongchotiqul et al. (1996)
AlN, Wurtzite. The temperature dependence of phonon limited electron drift mobility calculated for two values of electron effective mass m*.
1 - m*/mo = 0.42;
2 - m*/mo = 0.52
Chin et al. (1994)