NSM Archive - Aluminium Gallium Arsenide (AlGaAs) - Two-dimensional electron and hole gas mobility at AlGaAs/GaAs interface
Two-dimensional electron and hole gas mobility at AlxGa1-xAs/GaAs interface
Temperature dependences of the electron Hall mobility in the modulation-doped two-dimensional gas. (Pfeiffer et al. (1989)). |
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Dependences of electron mobility versus surface carrier density 2D electron gas in the modulation-doped two-dimensional gas. (Pfeiffer et al. (1989)). |
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Dependences of surface electron density (Curve 1) and mobility (Curve 2) versus undoped spacer thickness. T=4 K. (Harris et al. (1987)). |
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Electron mobility in 2D-electron gas versus Al fraction x at three different temperatures. (Drummond et al. (1982)). |
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Hole mobility in 2D-hole gas versus temperature. Solid line shows theoretical calculation. Points show experimental data for hole surface density 2·1011 cm-2 (Walukiewicz (1996)). |