NSM Archive - Aluminium Gallium Arsenide (AlGaAs) - Electrical Properties (Basic constants)
Electrical properties - Basic Parameters
| Breakdown field | ≈(4÷6) ·105 V/cm |
| Mobility electrons | |
| 0<x<0.45 | 8·103-2.2·104x+104·x2 cm2 V-1 s-1 |
| 0.45<x<1 | -255+1160x-720x2 cm2 V-1 s-1 |
| Mobility holes | 370-970x+740x2 cm2 V-1 s-1 |
| Diffusion coefficient electrons | |
| 0<x<0.45 | 200-550x+250x2 cm2/s |
| 0.45<x<1 | -6.4+29x-18x2 cm2/s |
| Diffusion coefficient holes | 9.2-24x+18.5x2 cm2/s |
| Electron thermal velocity | |
| 0<x<0.4 | (4.4-2.1x)·105 m/s |
| 0.45<x<1 | 2.3·105 m/s |
| Hole thermal velocity | (1.8-0.5x)·105 m/s |