NSM Archive - Aluminium Gallium Arsenide (AlGaAs) - Basic Parameters

AlGaAs - Aluminium Gallium Arsenide

Basic Parameters at 300 K

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 (4.42-0.17x)·1022
Debye temperature 370+54x+22x2 K
Density 5.32-1.56x g·cm-3
Dielectric constant (static) 12.90-2.84x
Dielectric constant (high frequency) 10.89-2.73x
Effective electron mass me 0.063+0.083x mo (x<0.45)
Density-of-states electron mass mcd 0.85-0.14x mo (x>0.45)
Conductivity effective mass mcc 0.26 mo (x>0.45)
Effective hole masses mh 0.51+0.25x mo
Effective hole masses mlp 0.082+0.068x mo
Electron affinity 4.07-1.1x eV (x<0.45)
3.64-0.14x eV (x>0.45)
Lattice constant 5.6533+0.0078x A
Optical phonon energy 36.25+1.83x+17.12x2-5.11x3 meV